| 摘要 |
<p>Provided are a polishing pad that makes it possible to improve the flatness of the polished surface and planarization efficiency, with fewer scratches, in polishing a metal layer formed on a semiconductor substrate and the like, and a method of polishing a metal layer using the polishing pad. A polishing pad for metal layer wherein the storage elastic modulus at 80°C is 200 to 900 MPa and the storage elastic modulus at 110°C is 40 MPa or less, and a method of polishing a metal layer using the pad.</p> |
