发明名称 Cu-Ga ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To have a Cu-Ga alloy sputtering target contain sodium without incurring a flaw in it. <P>SOLUTION: A mixture of Cu-Ga alloy powder and powder of a sodium compound consisting of sodium and a chalcogen element is sintered by a hot press, in which way the Cu-Ga alloy is made to contain sodium compound particles therein in the form of islands. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013105885(A) 申请公布日期 2013.05.30
申请号 JP20110248711 申请日期 2011.11.14
申请人 SUMITOMO METAL MINING CO LTD 发明人 ANDO ISAO;SATO ERIKO
分类号 H01L31/04 主分类号 H01L31/04
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