| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for depositing a metallic thin film, whereby a low substrate temperature can be achieved and the deposition rate can be improved, and a raw material for depositing the metallic thin film. <P>SOLUTION: The method for depositing the metallic thin film comprises: using a metallic thin film raw material 9 having an amidinate ligand and a reaction gas 23 having nitrogen and hydrogen atoms; and alternately or simultaneously feeding the metallic thin film raw material and the reaction gas to a surface of a substrate 6, thereby depositing the metallic thin film with a low impurity content. The raw material for depositing the metallic thin film has the amidinate ligand and is used in combination with the reaction gas having nitrogen and hydrogen atoms for depositing the metallic thin film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
