发明名称 |
BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION |
摘要 |
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.
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申请公布号 |
US2013137250(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213726826 |
申请日期 |
2012.12.26 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC.;ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
OLANDER W. KARL;ARNO JOSE I.;KAIM ROBERT |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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