发明名称 |
METHOD FOR FABRICATING A LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE |
摘要 |
The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.
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申请公布号 |
US2013134547(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313748146 |
申请日期 |
2013.01.23 |
申请人 |
SOITEC;COMMISSARIAT A I'ENERGIE ATOMIQUE;COMMISSARIAT A I'ENERGIE ATOMIQUE;SOITEC |
发明人 |
SIGNAMARCHEIX THOMAS;ALLIBERT FREDERIC;DEGUET CHRYSTEL |
分类号 |
H01L29/16 |
主分类号 |
H01L29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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