发明名称 |
CROSS-POINT DIODE ARRAYS AND METHODS OF MANUFACTURING CROSS-POINT DIODE ARRAYS |
摘要 |
Methods of forming an array of memory cells and memory cells that have pillars. Individual pillars can have a semiconductor post formed of a bulk semiconductor material and a sacrificial cap on the semiconductor post. Source regions can be between columns of the pillars, and gate lines extend along a column of pillars and are spaced apart from corresponding source regions. Each gate line surrounds a portion of the semiconductor posts along a column of pillars. The sacrificial cap structure can be selectively removed to thereby form self-aligned openings that expose a top portion of corresponding semiconductor posts. Individual drain contacts formed in the self-aligned openings are electrically connected to corresponding semiconductor posts.
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申请公布号 |
US2013134503(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313751902 |
申请日期 |
2013.01.28 |
申请人 |
MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. |
发明人 |
ZAHURAK JOHN;TANG SANH D.;SANDHU GURTEJ S. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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