发明名称 |
VARIABLE RESISTOR, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND METHODS OF FABRICATING THE SAME |
摘要 |
A variable resistor, a nonvolatile memory device and methods of fabricating the same are provided. The variable resistor includes an anode electrode and a cathode electrode, a variable resistive layer including CdS nanoscale particles provided between the anode electrode and the cathode electrode, and an initial metal atom diffusion layer within the variable resistive layer. The variable resistor is a bipolar switching element and configured to be in a reset state when a positive voltage relative to a cathode electrode is applied to the anode electrode, and configured to be in a set state when a negative voltage relative to the cathode electrode is applied to the anode electrode. |
申请公布号 |
US2013134374(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213689390 |
申请日期 |
2012.11.29 |
申请人 |
SK HYNIX INC.;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATI;KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION;SK HYNIX INC. |
发明人 |
KIM WOONG;JU YONG CHAN;KIM SEUNGWOOK |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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