| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems that a back side electrode of an SiC semiconductor substrate requires heat treatment at about 1000 degrees centigrade as PDA after depositing a metal film for silicide formation, such as nickel, in order to attain low contact resistance, when the heat treatment is executed by conventional heat treatment or RTA, there is restrictions that the heat treatment must be executed before formation of an aluminum film and the like on a front surface of a wafer, since the front side of the wafer exceeds a melting point of aluminum and the like, furthermore contact resistance cannot be sufficiently lowered in laser annealing by using an existing ultraviolet laser. <P>SOLUTION: A method for manufacturing a semiconductor device includes: forming a metal film for silicide formation on a back side surface with an aluminum-based metal film formed on a front side surface of an SiC substrate; and executing silicide formation processing to the back side surface by using a laser beam. The laser beam is selected to a visible light within a wavelength region which does not substantially transmit the metal film for silicide formation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
