SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device.

SOLUTION: A semiconductor device of an embodiment comprises: (a) a MISFET arranged on an active region Ac surrounded by an element isolation region ST1 and including a semiconductor region 3; (b) an insulation layer BOX arranged under the active region Ac; (c) a p-type semiconductor region 1W arranged under the active region Ac via the insulation layer BOX; and (d) an n-type second semiconductor region 2W arrange under the p-type semiconductor region 1W and having a conductivity type opposite to the p-type. The p-type semiconductor region 1W includes a connection area CA extending from under the insulation layer BOX. The p-type semiconductor region 1W and a gate electrode G of the MISFET are connected by a shared plug SP1 formed by an integral conductive film extending from above the gate electrode G to above the connection area CA.

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