发明名称 SEMICONDUCTOR CHIP HAVING PLURAL PENETRATING ELECTRODES THAT PENETRATE THERETHROUGH
摘要 Disclosed herein is a semiconductor chip that includes: a semiconductor chip body including a semiconductor substrate and a circuit element layer provided on a main surface of the semiconductor substrate, the circuit element layer including a plurality of circuit elements; first to fourth penetrating electrodes penetrating the semiconductor chip body; a first conductive path electrically connected between the first penetrating electrode and the second penetrating electrode without being in contact with any one of the circuit elements; a second conductive path electrically connected between the first penetrating electrode and the third penetrating electrode without being in contact with any one of the circuit elements; and a third conductive path electrically connected between the second penetrating electrode and the fourth penetrating electrode without being in contact with any one of the circuit elements.
申请公布号 US2013134421(A1) 申请公布日期 2013.05.30
申请号 US201213688123 申请日期 2012.11.28
申请人 ELPIDA MEMORY, INC.;ELPIDA MEMORY, INC. 发明人 TAKAKURA KAZUYA;ISHIKAWA TORU
分类号 H01L23/48 主分类号 H01L23/48
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