| 摘要 |
A method of cleaning tungsten plug surfaces in ultra large scale integrated circuits after chemical-mechanical polishing, the method including: a) preparing a cleaning solution by mixing deionized water, between 15 and 30 g/L of an active agent with respect to the deionized water, between 5 and 20 g/L of a chelating agent with respect to the deionized water, and between 1 and 60 g/L of a corrosion inhibitor with respect to the deionized water; b) after alkaline chemical-mechanical polishing, washing the tungsten plug surfaces using the cleaning solution at a flow rate of between 1000 and 4000 g/min for between 30 s and 3 min.
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