| 发明名称 |
METHOD OF MODIFYING A LOW K DIELECTRIC LAYER HAVING ETCHED FEATURES AND THE RESULTING PRODUCT |
| 摘要 |
A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is reduced by at least one of: (a) applying thermal energy to the layer to cause the layer temperature to be between 100 C and 400 C; (b) irradiating the layer with electromagnetic energy; and/or (c) irradiating the layer with free ions.
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| 申请公布号 |
US2013137261(A1) |
申请公布日期 |
2013.05.30 |
| 申请号 |
US201113306340 |
申请日期 |
2011.11.29 |
| 申请人 |
LIOU JOUNG-WEI;KO CHUNG-CHI;CHOU CHIA-CHENG;LIN KENG-CHU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIOU JOUNG-WEI;KO CHUNG-CHI;CHOU CHIA-CHENG;LIN KENG-CHU |
| 分类号 |
H01L21/768;H01L21/26;H01L21/324 |
主分类号 |
H01L21/768 |
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