发明名称 |
Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling |
摘要 |
A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.
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申请公布号 |
US2013137236(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313741086 |
申请日期 |
2013.01.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
BHUWALKA KRISHNA KUMAR;GOTO KEN-ICHI |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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