发明名称 |
HYDROGEN BARRIER LINER FOR FERRO-ELECTRIC RANDOM ACCESS MEMORY (FRAM) CHIP |
摘要 |
A method for forming a hydrogen barrier liner for a ferro-electric random access memory chip including forming a first dielectric layer over a substrate; forming a gate over the first dielectric layer; forming a first aluminum oxide layer over the gate and the first dielectric layer; forming a second dielectric layer over the first aluminum oxide layer; etching a trench through the second dielectric layer and the first aluminum oxide layer to the gate; forming a hydrogen barrier liner over the second dielectric layer, the hydrogen barrier liner lining the trench and contacting the gate; forming a silicon dioxide layer over the first aluminum dioxide layer, the silicon dioxide layer substantially filling the trench; and substantially removing the silicon dioxide layer leaving a silicon dioxide plug in the trench.
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申请公布号 |
US2013137233(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313748038 |
申请日期 |
2013.01.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CZABAJ BRIAN M.;HART, III JAMES V.;MURPHY WILLIAM J.;NAKOS JAMES S. |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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地址 |
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