| 摘要 |
According to one embodiment, a mask used with an exposure apparatus is disclosed. The mask includes a main pattern, and a sub-pattern having a dimension smaller than a resolution limit of the exposure apparatus. The sub-pattern is arranged next to the main pattern. The sub-pattern includes a first sub-pattern arranged next to the main pattern, and second sub-patterns contacting the first sub-pattern and arranged along a longitudinal direction of the first sub-pattern. The sub-patterns satisfy a condition of P@lambda/(NA(1+sigma0)). Where P is a pitch of the second sub-patterns, NA is a numerical aperture of the exposure apparatus, lambda and sigma0 are respectively exposure wave length and maximum sigma when the main pattern by using the exposure apparatus.
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