发明名称 |
TRANSISTOR, METHOD OF MANUFACTURING TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS |
摘要 |
A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode, with an insulating layer interposed in between; an etching stopper layer on the semiconductor layer; a pair of contact layers provided on the semiconductor layer, at least on both sides of the etching stopper layer; and source-drain electrodes electrically connected to the semiconductor layer through the pair of contact layers, and being in contact with the insulating layer. |
申请公布号 |
US2013134453(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201213678591 |
申请日期 |
2012.11.16 |
申请人 |
SONY CORPORATION;SONY CORPORATION |
发明人 |
USHIKURA SHINICHI;YAGI IWAO |
分类号 |
H01L33/08;H01L29/66;H01L29/786 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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