发明名称 TRANSISTOR, METHOD OF MANUFACTURING TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS
摘要 A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode, with an insulating layer interposed in between; an etching stopper layer on the semiconductor layer; a pair of contact layers provided on the semiconductor layer, at least on both sides of the etching stopper layer; and source-drain electrodes electrically connected to the semiconductor layer through the pair of contact layers, and being in contact with the insulating layer.
申请公布号 US2013134453(A1) 申请公布日期 2013.05.30
申请号 US201213678591 申请日期 2012.11.16
申请人 SONY CORPORATION;SONY CORPORATION 发明人 USHIKURA SHINICHI;YAGI IWAO
分类号 H01L33/08;H01L29/66;H01L29/786 主分类号 H01L33/08
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