MECHANISMS OF FORMING DAMASCENE INTERCONNECT STRUCTURES

摘要

PURPOSE: Mechanisms for forming damascene interconnection structures are provided to improve the electrical performance and reliability of the damascene interconnection structures by forming a metal cap layer on a reflowed conductive layer. CONSTITUTION: A dielectric layer(20) is formed on a substrate(21). A diffusion barrier layer(28) covers the bottoms and the sidewalls of a first trench(22) and a second trench(24). A first conductive layer(30) is formed on the diffusion barrier layer. A metal cap layer(50) is deposited on the first conductive layer. A second conductive layer(55) is deposited on the metal cap layer.