| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ideal semiconductor variable capacitance element small in leakage current for solving the problem of a variable capacitance element of a p-n junction structure which applies a reverse voltage, and accordingly causes leakage current to some extent. <P>SOLUTION: The semiconductor variable capacitance element has an insulating layer 3 provided between a stacked body formed of a p-type semiconductor layer 1 and an n-type semiconductor layer 2 and an electrode, and accordingly can prevent leakage current from passing therethrough. The semiconductor variable capacitance element applies a reverse-bias voltage to the electrode, and thereby generates variable capacitance proportional to the applied reverse-bias voltage at a low frequency. <P>COPYRIGHT: (C)2013,JPO&INPIT |
