| 摘要 |
A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first patterned metal layer. The metal layer and the semiconductor layer are patterned to form a second patterned metal layer and a patterned semiconductor layer. The second patterned metal layer includes data lines, a source and a drain. The patterned semiconductor layer includes a first semiconductor pattern completely overlapping the second patterned metal layer and a second semiconductor pattern without overlapping the second patterned metal layer, wherein the second semiconductor pattern includes a channel pattern and a marginal pattern. The channel pattern is between the source and the drain and the marginal pattern surrounds the first semiconductor pattern.
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