| 摘要 |
<p>An enhancement-mode group III-N high electron mobility transistor (HEMT) (200) with a reverse polarization cap is formed in a method that utilizes a reverse polarization cap structure (212), such as an InGaN cap structure, to deplete the two-dimensional electron gas (2DEG) and form a normally off device, and a spacer layer (210) that lies below the reverse polarization cap structure and above the barrier layer (118) of the HEMT which allows the reverse polarization cap layer to be etched without etching into the barrier layer.</p> |
