METHOD FOR FORMING SELF-ALIGNED PHASE-CHANGE SEMICONDUCTOR DIODE MEMORY
摘要
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.
申请公布号
WO2010022036(A3)
申请公布日期
2013.05.30
申请号
WO2009US54137
申请日期
2009.08.18
申请人
CONTOUR SEMICONDUCTOR, INC.;APODACA, MAC, D.;ZHAO, AILIAN;CHOW, JENN, C.;BROWN, THOMAS;CEDER, LISA
发明人
APODACA, MAC, D.;ZHAO, AILIAN;CHOW, JENN, C.;BROWN, THOMAS;CEDER, LISA
