发明名称 |
CMOS TRANSISTORS HAVING DIFFERENTIALLY STRESSED SPACERS |
摘要 |
CMOS transistors are formed incorporating a gate electrode having tensely stressed spacers on the gate sidewalls of an n channel field effect transistor and having compressively stressed spacers on the gate sidewalls of a p channel field effect transistor to provide differentially stressed channels in respective transistors to increase carrier mobility in the respective channels.
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申请公布号 |
US2013134523(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313752388 |
申请日期 |
2013.01.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADAM LAHIR S.;MEHTA SANJAY C.;HARAN BALASUBRAMANIAN S.;DORIS BRUCE B. |
分类号 |
H01L29/78;H01L27/092 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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