| 摘要 |
A semiconductor device includes a conductive film formed on an insulating film, and a first polysilicon film formed on the conductive film. A stacked film including the conductive film and the first polysilicon film forms a first pattern including a central region, and end regions each located at a side of the central region. A silicide film is formed on at least the central region of the stacked film. A discontinuity is formed in a central region of the conductive film. The conductive film is separated into the two portions by the discontinuity.
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