发明名称 DUAL POWER SUPPLY MEMORY ARRAY HAVING A CONTROL CIRCUIT THAT DYANMICALLY SELECTS A LOWER OF TWO SUPPLY VOLTAGES FOR BITLINE PRE-CHARGE OPERATIONS AND AN ASSOCIATED METHOD
摘要 Disclosed is a memory array in which the lower of two supply voltages from two power supplies is dynamically selected for bitline pre-charge operations. In the memory array, a voltage comparator compares the first supply voltage on a first power supply rail to a second supply voltage on a second power supply rail and outputs a voltage difference signal. If the voltage difference signal has a first value indicating that the first supply voltage is equal to or less than the second supply voltage, than a control circuit ensures that the complementary bitlines connected to a memory cell are pre-charged to the first supply voltage. If the voltage difference signal has a second value indicating that the first supply voltage is greater than the second supply voltage, then the control circuit ensures that the complementary bitlines are pre-charged to the second supply voltage. Also disclosed is an associated method.
申请公布号 US2013135944(A1) 申请公布日期 2013.05.30
申请号 US201113307245 申请日期 2011.11.30
申请人 BRACERAS GEORGE M.;PETERSON KIRK D.;PILO HAROLD;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BRACERAS GEORGE M.;PETERSON KIRK D.;PILO HAROLD
分类号 G11C5/14 主分类号 G11C5/14
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