发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A method of manufacturing a semiconductor device, includes supplying a first etching gas and a second etching gas having a decomposition rate lower than that of the first etching gas from one end of a substrate accommodating region in a process chamber where a plurality of substrates are stacked while exhausting an inside of a process chamber from other end of the substrate accommodating region; and etching a first portion of the plurality of substrate at the one end of the substrate accommodating region using a portion of radicals generated from the first etching gas and second etching gas, and etching a second portion of the plurality of substrates at the other end of the substrate accommodating region using at least a portion of a remaining radicals of the radicals generated from the first etching gas and second etching gas.
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申请公布号 |
US2013137272(A1) |
申请公布日期 |
2013.05.30 |
申请号 |
US201313751517 |
申请日期 |
2013.01.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
ISHIBASHI KIYOHISA;MORIYA ATSUSHI |
分类号 |
H01L21/461;H01L21/302;H01L21/306 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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地址 |
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