| 发明名称 |
LIGHT EMITTING DIODE HAVING STRAIN-ENHANCED WELL LAYER |
| 摘要 |
An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer.
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| 申请公布号 |
US2013134386(A1) |
申请公布日期 |
2013.05.30 |
| 申请号 |
US201213484120 |
申请日期 |
2012.05.30 |
| 申请人 |
CHOI JOO WON;HAN YOO DAE;HEO JEONG HUN;SEOUL OPTO DEVICE CO., LTD. |
发明人 |
CHOI JOO WON;HAN YOO DAE;HEO JEONG HUN |
| 分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
| 代理机构 |
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