| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device and method for producing samples, with which thickness of a sample of a processing object can be measured in a simple manner. <P>SOLUTION: A method of producing samples includes the steps of: irradiating a sample S with an electron beam EB of a first acceleration voltage and acquiring a first secondary signal Is<SB POS="POST">1</SB>generated by the sample S; irradiating the sample S with an electron beam EB of a second acceleration voltage and acquiring a second secondary signal Is<SB POS="POST">2</SB>generated by the sample S; computing the ratio of the second secondary signal Is<SB POS="POST">2</SB>to the first secondary signal Is<SB POS="POST">1</SB>, or Is<SB POS="POST">2</SB>/Is<SB POS="POST">1</SB>; computing the sample thickness t based on the ratio Is<SB POS="POST">2</SB>/Is<SB POS="POST">1</SB>making use of the fact that the ratio Is<SB POS="POST">2</SB>/Is<SB POS="POST">1</SB>is dependent on the thickness t of the sample S; computing the amount of processing that needs to be applied to the sample S in order to make the thickness t thereof equal to a target thickness t<SB POS="POST">0</SB>based on the computed thickness t of the sample S; applying the computed amount of processing to the sample S by irradiating the sample S with an ion beam IB to achieve the thickness t that is close to the target thickness t<SB POS="POST">0</SB>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
