| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a method for manufacturing a solar cell for surely executing suppression of generation of a crack and PN isolation in the solar cell. <P>SOLUTION: In a method for manufacturing a solar cell, a layer of a second conductivity type different from a first conductivity type is formed on a surface of a silicon wafer of the first conductivity type; one point on a periphery surrounding inside of the surface where the layer of the second conductivity type is formed in the silicon wafer is set as an initial point 15, an energy beam is irradiated and scanned along the periphery while crossing the energy beam with a division line for dividing the surface into a part including the initial point 15 and a part without including the initial point 15, the energy beam is further irradiated and scanned around the whole periphery once, the layer of the second conductivity type in a part irradiated with the energy beam is removed to form a processing groove 7 by continuing the irradiating and scanning until the energy beam crosses again the part included in the periphery of the division line where the energy beam is once crossed; a layer of the first conductivity type is formed by diffusing impurities into the inside of the surface; and the silicon wafer is cut along the division line 14. <P>COPYRIGHT: (C)2013,JPO&INPIT |
