| 摘要 |
<p>The invention is related to a method for forming a floating gate memory structure, wherein the floating gates are made from monocrystalline semiconductor material, epitaxially grown on a monocrystalline substrate, through selective epitaxial growth, laterally grown over a layer of tunnel oxide. The invention is in particular related to a method for forming a floating gate memory structure wherein columnar-shaped floating gate structures are produced, provided with thermally grown oxide layers on their lateral sides.</p> |
