| 摘要 |
PURPOSE: An apparatus and method for manufacturing a semiconductor are provided to increase an etch selectivity of a silicon nitride layer to a silicon oxide layer or a polysilicon layer in a plasma etching process. CONSTITUTION: A substrate is arranged in a processing chamber(110). A processing space(111) is formed in the processing chamber to process the substrate. A plasma supply unit(300) generates plasma from a first source gas which includes CH2F2, N2, and O2. The plasma is supplied to the processing space of the processing chamber.
|
