Piezoelectric actuating structure comprising an integrated piezoresistive strain gauge and manufacturing method thereof

摘要

The structure has a strain gauge i.e. piezoresistive gauge, and an actuator formed from a stack on a surface of a substrate. The stack comprises a layer of piezoelectric material (42) arranged between a bottom electrode layer (43) and a top electrode layer. A portion of the stack forming the actuator is arranged above a cavity formed in the substrate. The gauge is located in the top electrode layer and/or the bottom electrode layer, where the layers comprise discontinuities of electrodes allowing production of the gauge. An elastic substrate layer is arranged above the cavity. The piezoelectric material is selected from a group comprising titanium and lead zirconate or lead zirconate titanate, aluminum nitride and zinc oxide. The elastic substrate layer is made of silicon, silicon oxide, silicon nitride or conductive polymer type material. An independent claim is also included for a method for fabricating a piezoelectric actuating structure.