| 摘要 |
An inverter device includes a plurality of switching circuits (5) in which first switching elements (8) including Si semiconductors and second switching element (9) including WBG semiconductors having ON resistance smaller than that of the first switching elements (8) and having switching speed higher than that of the first switching elements (8) are connected in parallel. The inverter device includes a converting circuit (4) that converts a direct-current voltage into a desired alternating-current voltage and a driving unit (16) that generates a plurality of driving signals for respectively turning on and off the switching circuits (5). The inverter device includes, for each of the switching circuits (5), a gate circuit (17) that, based on the driving signals, turns on the second switching element (9) later than the first switching element (8) and turns off the first switching element (8) later than the second switching element (9). |
