发明名称 |
METHOD OF FABRICATION OF SEMICONDUCTOR DEVICE |
摘要 |
The invention relates to a method of fabricating a semiconductor device, the method including: providing a stacked semiconductor structure having a substrate, a buffer layer and one or more device layers; depositing a layer of AlSb on one or more regions of the upper surface of the stacked structure; and oxidising the AlSb layer in the presence of water to form a layer of aluminium oxide on the one or more regions of the upper surface. The semiconductor device is preferably a field effect transistor, and the method preferably includes the additional step of depositing source, drain and/or gate electrodes. In preferred embodiments, the method is controlled so as to avoid exposing the intermediate AlSb structure to the atmosphere and/or the oxidation step is conducted at a temperature between 100° and 300° C. |
申请公布号 |
EP2596522(A1) |
申请公布日期 |
2013.05.29 |
申请号 |
EP20110745563 |
申请日期 |
2011.07.11 |
申请人 |
QINETIQ LIMITED |
发明人 |
EMENY, MARTIN, TREVOR;JACKSON, PEREGRINE, ORR;WALLIS, DAVID, JOHN |
分类号 |
H01L21/316;H01L23/29;H01L23/31;H01L29/205;H01L29/51;H01L29/772;H01L29/78 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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