| 摘要 |
<p>Magnetic random access memory (MRAM) element (1) suitable for a thermally-assisted (TA) write operation and for a self-referenced read operation, comprising a magnetic tunnel junction portion (2) having a first portion (2') comprising: a first storage layer (23) having a first storage magnetisation (231); a first sense layer (21) having a first free magnetization (211); and a first tunnel barrier layer (25) between the first storage layer (23) and the first sense layer (21); and a second portion (2"), comprising: a second storage layer (24) having a first storage magnetization (232); a second sense layer (22) having a second free magnetisation (212); and a second tunnel barrier layer (26) between the second storage layer (24) and the second sense layer (22); the magnetic tunnel junction portion (2) further comprising an antiferromagnetic layer (20) comprised between the first and second storage layers (23, 24) and pinning the first and second storage magnetizations (231, 232) below a critical temperature of the antiferromagnetic layer (20), and freeing the first and second storage magnetizations (231, 232) at and above the critical temperature; such that, during the write operation, the first storage magnetisation (231) is switched in a direction substantial parallel to the second storage magnetization (232); wherein the magnetoresistance of the MRAM element (1) remains substantially unchanged by the write operation. The magnetic tunnel junction can be heated effectively while minimizing risks of breakdown and ageing of the tunnel barrier layers.</p> |
