| 摘要 |
The method involves forming an elongate magnetic block on a substrate (2), and forming another elongate magnetic block on the substrate (4), where each block is formed of a stack of several ferromagnetic and anti-ferromagnetic layers. The magnetic blocks are annealed (8) to a temperature higher than the Neel temperature of each anti-ferromagnetic layer, and a biasing layer is deposited (6) to exert uniaxial stress in the longitudinal direction of each magnetic block, so as to improve the alignment of the magnetization of each ferromagnetic layer to the longitudinal direction. The biasing layer is made of oxide or nitride or metal. An independent claim is also included for a device having magnetic blocks magnetized along different directions. |
