METHOD OF DETACHING A THIN FILM AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION

摘要

Detachment of a thin film from a source substrate comprises: (a) implantation of ions or gaseous species in the source substrate to form a buried zone embrittled by the presence of defects; (b) fracture in the embrittled zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is apt to form defects and the other is apt to occupy these defects, the detachment being effected at a temperature lower than that which would be obtained with a single dose of the first species.