发明名称 |
Methods for enhancing photolithography patterning |
摘要 |
A method for fabricating a semiconductor device that includes: providing a substrate prepared with a photoresist layer; providing a photomask comprising a first and a second pattern having a respective first and second pitch range; providing a composite aperture comprising a first and a second off-axis illumination aperture pattern, the first off-axis aperture pattern having a configuration that improves the process window of the first pitch range and the second off-axis aperture pattern having a configuration that improves the process window for a second pitch range; exposing the photoresist layer on the substrate with radiation from an exposure source through the composite aperture and the photomask; and developing the photoresist layer to pattern the photoresist layer.
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申请公布号 |
US8450046(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20090392093 |
申请日期 |
2009.02.24 |
申请人 |
LING MOH LUNG;CHUA GEK SOON;LIN QUNYING;TAY CHO JUI;QUAN CHENGGEN;GLOBALFOUNDRIES SINGAPORE PTE. LTD.;NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
LING MOH LUNG;CHUA GEK SOON;LIN QUNYING;TAY CHO JUI;QUAN CHENGGEN |
分类号 |
G03F7/30;G03B27/72 |
主分类号 |
G03F7/30 |
代理机构 |
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代理人 |
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地址 |
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