发明名称 |
Contact etch stop layers of a field effect transistor |
摘要 |
An exemplary structure for a field effect transistor according to at least one embodiment comprises a substrate comprising a surface; a gate structure comprising sidewalls and a top surface over the substrate; a spacer adjacent to the sidewalls of the gate structure; a first contact etch stop layer over the spacer and extending along the surface of the substrate; an interlayer dielectric layer adjacent to the first contact etch stop layer, wherein a top surface of the interlayer dielectric layer is coplanar with the top surface of the gate structure; and a second contact etch stop layer over the top surface of the gate structure.
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申请公布号 |
US8450216(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20100849601 |
申请日期 |
2010.08.03 |
申请人 |
TEO LEE-WEE;ZHU MING;YOUNG BAO-RU;CHUANG HARRY-HAK-LAY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TEO LEE-WEE;ZHU MING;YOUNG BAO-RU;CHUANG HARRY-HAK-LAY |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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