Epitaxial devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.
申请公布号
US8450776(B2)
申请公布日期
2013.05.28
申请号
US201213528574
申请日期
2012.06.20
申请人
DEVILLIERS ANTON;BYERS ERIK;SILLS SCOTT;MICRON TECHNOLOGY, INC.