发明名称 TDI image sensor in CMOS technology with high video capture rate
摘要 An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.
申请公布号 US8451354(B2) 申请公布日期 2013.05.28
申请号 US201113103492 申请日期 2011.05.09
申请人 CAZAUX YVON;GIFFARD BENOIT;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 CAZAUX YVON;GIFFARD BENOIT
分类号 H04N3/14;H04N5/335 主分类号 H04N3/14
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