发明名称 |
TDI image sensor in CMOS technology with high video capture rate |
摘要 |
An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.
|
申请公布号 |
US8451354(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US201113103492 |
申请日期 |
2011.05.09 |
申请人 |
CAZAUX YVON;GIFFARD BENOIT;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
CAZAUX YVON;GIFFARD BENOIT |
分类号 |
H04N3/14;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|