发明名称 |
Thin film transistor, fabrication method of same, and display device having the same |
摘要 |
A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
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申请公布号 |
US8450159(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20110929733 |
申请日期 |
2011.02.11 |
申请人 |
PARK JONG-HYUN;YOU CHUN-GI;PARK SUN;KANG JIN-HEE;LEE YUL-KYU;SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK JONG-HYUN;YOU CHUN-GI;PARK SUN;KANG JIN-HEE;LEE YUL-KYU |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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