发明名称 |
Methods of forming semiconductor trench and forming dual trenches, and structure for isolating devices |
摘要 |
Methods of forming a semiconductor trench and forming dual trenches and a structure for isolating devices are provided. The structure for isolating devices is disposed in a substrate having a periphery area and an array area. The structure for isolating devices includes a first isolation structure and a second isolation structure. The first isolation structure has a profile with at least three steps and is disposed in the substrate in the periphery area. The second isolation structure has a profile with at least two steps and is disposed in the substrate in the array area.
|
申请公布号 |
US8450180(B2) |
申请公布日期 |
2013.05.28 |
申请号 |
US20100981905 |
申请日期 |
2010.12.30 |
申请人 |
MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG;MACRONIX INTERNATIONAL CO. LTD. |
发明人 |
MA CHU-MING;WU TIN-WEI;YANG CHIH-HSIANG |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|