| 摘要 |
PURPOSE: An aqueous solution of cerium(IV) complex or salt is provided to remove mask material, especially ion-injected and patterned photoresist, from the surface of a semiconductor. CONSTITUTION: An aqueous solution for removing resist composition comprises one or more booster additives which is a compound capable of being oxidized by cerium(IV) complex or salt. The booster additive is selected from ethanol, propanol, isopropanol, N-butanol, isobutanol, T-butanol, ethylene glycol, glycerol, cyclopropano, cyclobutanol, cyclophentanol, polyvinyl alcohol(PVA), polyethylene glycol(PEG), at least one alcohol functional group-containing polymer, formic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, oxalic acid, formaldehyde, acetaldehyde, glyoxal, methyl acetate, ethyl acetate, acetamide, diethyl ether, methyl tertial-butyl ether, di-t-butyl ether, glycolic acid, glyoxylic acid, methyl carbitol, alpha-hydroxyisobutyric acid, pyruvic acid, and combinations thereof. The aqueous solution additionally includes one or more ammonium salts or acid, as a stabilizer. |
