发明名称 HIGH-FREQUENCY ANTENNA CIRCUIT AND INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A high-frequency antenna circuit and an inductively coupled plasma processing device are provided to improve power efficiency by suppressing heat generation of a matching circuit. CONSTITUTION: A high-frequency antenna circuit includes a plasma generation antenna(16), a high-frequency power supply(18), and a matching circuit(19). The plasma generation antenna is composed of multiple sectionalized antennas(16-1,...,16-5) and generates plasma in a processing chamber. The high-frequency power supply supplies high-frequency power to the plasma generation antenna. The matching circuit is inserted between the high-frequency power supply and the plasma generation antenna. The multiple sectionalized antennas form the plasma generation antenna, and high-frequency power is distributed to the multiple sectionalized antennas after passing through the matching circuit. Parallel resonance capacitor circuits(30-1,...,30-5) are installed at each of the multiple sectionalized antennas in parallel.
申请公布号 KR20130054184(A) 申请公布日期 2013.05.24
申请号 KR20120128714 申请日期 2012.11.14
申请人 TOKYO ELECTRON LIMITED 发明人 SASAKI KAZUO;SATOYOSHI TSUTOMU
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
代理机构 代理人
主权项
地址