TUNNEL FET AND METHODS FOR FORMING THE SAME

摘要

PURPOSE: A tunnel FET and a method for forming the same are provided to prevent leakage current by using a gate electrode, a source, and a drain region. CONSTITUTION: A source and a drain region(126) are formed with opposite conductive types. A channel region(122) is formed between the source and the drain region. A source diffusion barrier(128) is formed between the channel region and the source region. The source diffusion barrier and the source are overlapped with a gate electrode. The source diffusion barrier has a second band gap larger than a first band gap.