| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bypass diode with reduced warpage. <P>SOLUTION: A bypass diode 201 includes: a semiconductor substrate 1 that has a first surface 31 and a second surface 32 faced to each other; a p-electrode 4 as a first-conductivity-type electrode and an n-electrode 5 as a second-conductivity-type electrode that are disposed on the first surface 31; a back electrode 7 that is disposed on the second surface 32 and has the same polarity as the semiconductor substrate 1; a first oxide film 12a that is disposed on the first surface 31; and a second oxide film 12b that is disposed on the second surface 32. <P>COPYRIGHT: (C)2013,JPO&INPIT |
