| 摘要 |
A thermoelectric oxide material having at least one family of periodic planar crystallographic defects, where the planar defect interspacings match a significant fraction of the phonon dispersion (free path distribution) in the oxide material. As an example, a sub-stoichiometric, composite thermoelectric oxide material can be represented by the formula NbO2.5-x:M, where 0<x@1.5 and M represents a second phase. Optionally, the material may be doped. The thermoelectric material displays a thermoelectric figure of merit (ZT) of 0.15 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting raw materials under reducing conditions to form the sub-stoichiometric oxide composite. The second phase may promote reduction of the oxide. The reaction product can be sintered to form a dense thermoelectric material.
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