METHOD FOR GROWING beta-Ga2O3 SINGLE CRYSTAL

摘要

Provided is a method for growing a beta-Ga2O3 single crystal, which is capable of effectively suppressing twinning of the crystal. One embodiment of the present invention provides a method for growing a beta-Ga2O3 single crystal (25) using an EFG method, which comprises: a step wherein a seed crystal (20) is brought into contact with a Ga2O3 melt (12); and a step wherein the seed crystal (20) is pulled and a beta-Ga2O3 single crystal (25) is grown without performing a necking process. In the method for growing a beta-Ga2O3 single crystal, the widths of the beta-Ga2O3 single crystal (25) are 110% or less of the widths of the seed crystal (20) in all directions.