| 摘要 |
In conjunction with a photomask blank comprising a transparent substrate, a pattern-forming film, and an etch mask film, the etch mask film is evaluated by measuring a first etching clear time (C1) taken when the etch mask film is etched under the etching conditions to be applied to the pattern-forming film, measuring a second etching clear time (C2) taken when the etch mask film is etched under the etching conditions to be applied to the etch mask film, and computing a ratio (C1/C2) of the first to second etching clear time.
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