| 摘要 |
The present invention discloses a TFT, an array substrate, a device and a manufacturing method. The TFT comprises a conductive metal layer; an insulting oxidizing layer is formed on the surface of the metal layer. In the present invention, because the oxidation treatment is conducted on the surface of the metal layer, the insulating oxidizing layer is formed and can substitute for the silicon nitride as a TFT barrier layer; compared with the preparation of a silicon nitride barrier layer needing the drilling crew and the material cost, the preparation of the oxidizing layer needs cheap equipment without increasing further materials so that the cost is saved; in addition, the oxidizing layer only exists on the surface of the metal layer, and has small obstruction for light and low requirement for the penetration rate; thus, the process control is relatively simple and the cost can be further reduced.
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